BC559 Specs and Replacement
Type Designator: BC559
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 125
Noise Figure, dB: -
Package: TO92
BC559 Substitution
BC559 datasheet
bc559 bc560.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC559/D Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC559 BC560 Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 30 45 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 50 Vdc Emitter Base Voltage VEBO ... See More ⇒
bc556 bc557 bc558 bc559 bc560.pdf
BC556/557/558/559/560 Switching and Amplifier High Voltage BC556, VCEO= -65V Low Noise BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BC556 -80 V BC557/560 -50 V BC558/559 -30 V... See More ⇒
bc559.pdf
BC559 Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit http //onsemi.com Collector-Emitter Voltage VCEO -30 -45 Vdc Collector-Base Voltage VCBO -30 -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current Continuous IC -100 mAdc Total Device Dissipation @ PD mW 1 TA = 25 C 625 2 3 Derate above 25 C 5.0 mW/ C Total Device Dissipation @ P... See More ⇒
Detailed specifications: BC558 , BC558A , BC558AP , BC558B , BC558BP , BC558C , BC558CP , BC558VI , TIP35C , BC559A , BC559AP , BC559B , BC559BP , BC559C , BC559CP , BC560 , BC560A .
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