BC618 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC618
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO92
BC618 Transistor Equivalent Substitute - Cross-Reference Search
BC618 Datasheet (PDF)
bc618 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC618NPN Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Jul 04Philips Semiconductors Product specificationNPN Darlington transistor BC618FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 55 V)1 emitter High DC current gain.2 base3 collector
bc618rev.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC618/DDarlington TransistorsNPN SiliconBC618COLLECTOR 1BASE2EMITTER 3123MAXIMUM RATINGSCASE 2904, STYLE 17Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 55 VdcCollectorBase Voltage VCBO 80 VdcEmitterBase Voltage VEBO 12 VdcCollector Current Continuous I
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MPQ3642 | BUL705 | LMBT6520LT3G
History: MPQ3642 | BUL705 | LMBT6520LT3G
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