BC639 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC639
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
BC639 Transistor Equivalent Substitute - Cross-Reference Search
BC639 Datasheet (PDF)
bc635 bc637 bc639.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC635/DHigh Current TransistorsBC635NPN SiliconBC637BC639COLLECTOR23BASE1EMITTER1MAXIMUM RATINGS23BC BC BC635 637 639Rating Symbol UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 60 80 VdcCollectorBase Voltage VCBO 45 60 80 VdcEmitterBase Voltage
bc635 bc637 bc639.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistorsProduct specification 2001 Oct 10Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLIC
bc635 bc637 bc639 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI
bc639 bcp56 bcx56.pdf
BC639; BCP56; BCX5680 V, 1 A NPN medium power transistorsRev. 08 22 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC639[2] SOT54 SC-43A TO-92 BC640BCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53[1] Valid for all available sel
bc635 bc637 bc639.pdf
BC635/637/639Switching and Amplifier Applications Complement to BC636/638/640TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC635 45 V: BC637 60 V: BC639 100 VVCES Collector-Emitter Voltage : BC635 45 V: BC637 6
bc637 bc639 bc63916.pdf
BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-
bc635 bc636 bc637 bc638 bc639 bc640.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE
bc635 bc637 bc639.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. EMITTERFEATURES High current transistors 2. COLLECTOR 3. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code
bc635 bc637 bc639.pdf
BC635/637/639(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 VVCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V
bc63916.pdf
BC63916Switching and Amplifier ApplicationsTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K 100 VVCES Collector-Emitter Voltage 100 VVCEO Collector-Emitter Voltage 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current 1 AP
bc639rl1g bc639g.pdf
BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-
bc63916.pdf
BC63916NPN Epitaxial Silicon TransistorFeatures Switching and Amplifier ApplicationsTO-921. Emitter2. Collector1 13. Base2233Straight Lead Bent LeadBulk Packing Tape & Reel Ammo PackingOrdering InformationPart Number Top Mark Package Packing MethodBC63916-D74Z BC639-16 TO-92 3L AmmoBC63916-D27Z BC639-16 TO-92 3L Tape and ReelAbsolute Maximum Ratings(1)
bc637g bc639zl1g.pdf
BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .