All Transistors. BC639 Datasheet

 

BC639 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC639
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 BC639 Transistor Equivalent Substitute - Cross-Reference Search

   

BC639 Datasheet (PDF)

 ..1. Size:116K  motorola
bc635 bc637 bc639.pdf

BC639
BC639

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC635/DHigh Current TransistorsBC635NPN SiliconBC637BC639COLLECTOR23BASE1EMITTER1MAXIMUM RATINGS23BC BC

 ..2. Size:47K  philips
bc635 bc637 bc639.pdf

BC639
BC639

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistorsProduct specification 2001 Oct 10Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLIC

 ..3. Size:49K  philips
bc635 bc637 bc639 3.pdf

BC639
BC639

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

 ..4. Size:153K  philips
bc639 bcp56 bcx56.pdf

BC639
BC639

BC639; BCP56; BCX5680 V, 1 A NPN medium power transistorsRev. 08 22 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC639[2] SOT54 SC-43A TO-92 BC640BCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53[1] Valid for all available sel

 ..5. Size:55K  fairchild semi
bc635 bc637 bc639.pdf

BC639
BC639

BC635/637/639Switching and Amplifier Applications Complement to BC636/638/640TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC635 45 V: BC637 60 V: BC639 100 VVCES Collector-Emitter Voltage : BC635 45 V: BC637 6

 ..6. Size:92K  onsemi
bc637 bc639 bc63916.pdf

BC639
BC639

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

 ..7. Size:115K  cdil
bc635 bc636 bc637 bc638 bc639 bc640.pdf

BC639
BC639

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE

 ..8. Size:596K  jiangsu
bc635 bc637 bc639.pdf

BC639
BC639

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. EMITTERFEATURES High current transistors 2. COLLECTOR 3. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

 ..9. Size:154K  lge
bc635 bc637 bc639.pdf

BC639
BC639

BC635/637/639(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 VVCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V

 0.1. Size:55K  fairchild semi
bc63916.pdf

BC639
BC639

BC63916Switching and Amplifier ApplicationsTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K 100 VVCES Collector-Emitter Voltage 100 VVCEO Collector-Emitter Voltage 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current 1 AP

 0.2. Size:96K  onsemi
bc639rl1g bc639g.pdf

BC639
BC639

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

 0.3. Size:334K  onsemi
bc63916.pdf

BC639
BC639

BC63916NPN Epitaxial Silicon TransistorFeatures Switching and Amplifier ApplicationsTO-921. Emitter2. Collector1 13. Base2233Straight Lead Bent LeadBulk Packing Tape & Reel Ammo PackingOrdering InformationPart Number Top Mark Package Packing MethodBC63916-D74Z BC639-16 TO-92 3L AmmoBC63916-D27Z BC639-16 TO-92 3L Tape and ReelAbsolute Maximum Ratings(1)

 0.4. Size:96K  onsemi
bc637g bc639zl1g.pdf

BC639
BC639

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2N3055 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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