BC650DS Specs and Replacement
Type Designator: BC650DS
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 680
Package: TO92
BC650DS Substitution
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BC650DS datasheet
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Detailed specifications: BC639-6 , BC640 , BC640-10 , BC640-6 , BC650 , BC650C , BC650CS , BC650D , 2SC5200 , BC650E , BC650S , BC651 , BC651C , BC651CS , BC651D , BC651DS , BC651E .
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