2N2768 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N2768
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO61
Datasheet: 2N2760 , 2N2761 , 2N2762 , 2N2763 , 2N2764 , 2N2765 , 2N2766 , 2N2767 , 2SD669 , 2N2769 , 2N277 , 2N2770 , 2N2771 , 2N2772 , 2N2773 , 2N2774 , 2N2775 .