2N277 Specs and Replacement
Type Designator: 2N277
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 170 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 95 °C
Electrical Characteristics
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO36
2N277 Substitution
- BJT ⓘ Cross-Reference Search
2N277 datasheet
Detailed specifications: 2N2762, 2N2763, 2N2764, 2N2765, 2N2766, 2N2767, 2N2768, 2N2769, 2SD669A, 2N2770, 2N2771, 2N2772, 2N2773, 2N2774, 2N2775, 2N2776, 2N2777
Keywords - 2N277 pdf specs
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2N277 equivalent finder
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