BC878 Datasheet, Equivalent, Cross Reference Search
Type Designator: BC878
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO92
BC878 Transistor Equivalent Substitute - Cross-Reference Search
BC878 Datasheet (PDF)
bc878 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC878PNP Darlington transistor1999 May 31Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationPNP Darlington transistor BC878FEATURES PINNING High DC current gain (min. 1000)PIN DESCRIPTION High current (max. 1 A)1 base Low voltage (max. 80 V)2 collector
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: D33D6