BCF29C Specs and Replacement
Type Designator: BCF29C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 165 MHz
Forward Current Transfer Ratio (hFE), MIN: 420
Package: TO92
BCF29C Substitution
- BJT ⓘ Cross-Reference Search
BCF29C datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors 1997 May 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistors BCF29; BCF30 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (... See More ⇒
Detailed specifications: BCE107, BCE108, BCE109, BCE177, BCE178, BCE179, BCF29, BCF29B, C5198, BCF29R, BCF30, BCF30R, BCF32, BCF32R, BCF33, BCF33R, BCF39
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