BCF30R Specs and Replacement

Type Designator: BCF30R

SMD Transistor Code: C9

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 32 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 215

Noise Figure, dB: -

Package: SOT23

 BCF30R Substitution

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BCF30R datasheet

 9.1. Size:49K  philips

 bcf29 bcf30 cnv 2.pdf pdf_icon

BCF30R

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors 1997 May 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistors BCF29; BCF30 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (... See More ⇒

Detailed specifications: BCE177, BCE178, BCE179, BCF29, BCF29B, BCF29C, BCF29R, BCF30, 2SA1943, BCF32, BCF32R, BCF33, BCF33R, BCF39, BCF39B, BCF39C, BCF70

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