All Transistors. BCF30R Datasheet

 

BCF30R Datasheet and Replacement


   Type Designator: BCF30R
   SMD Transistor Code: C9
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 215
   Noise Figure, dB: -
   Package: SOT23
 

 BCF30R Substitution

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BCF30R Datasheet (PDF)

 9.1. Size:49K  philips
 bcf29 bcf30 cnv 2.pdf pdf_icon

BCF30R

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCF29; BCF30PNP general purpose transistors1997 May 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistors BCF29; BCF30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (

Datasheet: BCE177 , BCE178 , BCE179 , BCF29 , BCF29B , BCF29C , BCF29R , BCF30 , BC337 , BCF32 , BCF32R , BCF33 , BCF33R , BCF39 , BCF39B , BCF39C , BCF70 .

History: UN9117Q | UMD6NFHA | 2SC838 | 2SC3611 | 2SC5395 | 2SC5354

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