BCR48PN Datasheet, Equivalent, Cross Reference Search
Type Designator: BCR48PN
SMD Transistor Code: WT_WTs
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT-363
BCR48PN Transistor Equivalent Substitute - Cross-Reference Search
BCR48PN Datasheet (PDF)
bcr48pn.pdf
BCR 48PNNPN/PNP Silicon Digital Tansistor Array Switching circuit, inverter, interface circuit, drive circuit Two (galvanic) internal isolated NPN/PNP Transistor in one package Built in bias resistor NPN: R1 = 47k, R2 = 47k PNP: R1 = 2.2k, R2 = 47kTape loading orientationType Marking Ordering Code Pin Configuration PackageBCR 48PN WTs Q62702-C2496 1=E1
bcr48pn.pdf
BCR48PNNPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit4536 Two (galvanic) internal isolated NPN/PNP 21 Transistors in one package Built in bias resistor NPN: R1 = 47k, R2 = 47k PNP: R1= 2.2k, R2 = 47k Pb-free (RoHS compliant) package Qualified according AEC Q101C1 B2 E26 5 4R2
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
