BCR512 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCR512
SMD Transistor Code: XFs
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.33
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
BCR512 Transistor Equivalent Substitute - Cross-Reference Search
BCR512 Datasheet (PDF)
bcr512.pdf
BCR 512NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, drive circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 512 XFs Q62702-C2445 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base
bcr512.pdf
BCR512NPN Silicon Digital Transistor Built in bias resistor (R1= 4.7 k, R2= 4.7 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07184Type Marking Pin Configuration PackageBCR512 XFs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage V
bcr519.pdf
BCR 519NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 519 XKs UPON INQUIRY 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEB
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
