BCV28 Specs and Replacement
Type Designator: BCV28
SMD Transistor Code: ED
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20000
Package: SOT89
BCV28 Substitution
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BCV28 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV28; BCV48 PNP Darlington transistors 1999 Apr 08 Product specification Supersedes data of 1997 Apr 21 Philips Semiconductors Product specification PNP Darlington transistors BCV28; BCV48 FEATURES PINNING Very high DC current gain (min. 10000) PIN DESCRIPTION High current (max. 500 mA) 1 emitter Low voltage ... See More ⇒
PNP Silicon Darlington Transistors BCV 28 BCV 48 For general AF applications High collector current High current gain Complementary types BCV 29, BCV 49 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BCV 28 ED Q62702-C1852 B C E C SOT-89 BCV 48 EE Q62702-C1854 Maximum Ratings Parameter Symbol Values Unit BCV 28 BCV 48 Collector-emitter vol... See More ⇒
BCV28, BCV48 PNP Silicon Darlington Transistors 1 For general AF applications 2 High collector current 3 2 High current gain Complementary types BCV29, BCV49 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E SOT89 BCV48 EE 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Valu... See More ⇒
Detailed specifications: BCR555, BCR562, BCR569, BCR571, BCR573, BCR583, BCV26, BCV27, TIP42, BCV29, BCV46, BCV47, BCV48, BCV49, BCV61, 2SB562-B, BCV61A
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