BCV48 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCV48
SMD Transistor Code: EE
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: SOT89
BCV48 Transistor Equivalent Substitute - Cross-Reference Search
BCV48 Datasheet (PDF)
bcv28 bcv48.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BCV28; BCV48PNP Darlington transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 21Philips Semiconductors Product specificationPNP Darlington transistors BCV28; BCV48FEATURES PINNING Very high DC current gain (min. 10000)PIN DESCRIPTION High current (max. 500 mA)1 emitter Low voltage
bcv28 bcv48.pdf
PNP Silicon Darlington Transistors BCV 28BCV 48 For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BCV 28 ED Q62702-C1852 B C E C SOT-89BCV 48 EE Q62702-C1854Maximum RatingsParameter Symbol Values UnitBCV 28 BCV 48Collector-emitter vol
bcv28 bcv48.pdf
BCV28, BCV48PNP Silicon Darlington Transistors1 For general AF applications2 High collector current 32 High current gain Complementary types: BCV29, BCV49 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCV28 ED 1=B 2=C 3=E SOT89 BCV48 EE 1=B 2=C 3=E SOT89Maximum RatingsParameter Symbol Valu
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
