BCV49 Specs and Replacement
Type Designator: BCV49
SMD Transistor Code: EE_EG
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Package: SOT89
BCV49 Substitution
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BCV49 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington transistors 1999 Apr 08 Product specification Supersedes data of 1997 Apr 21 Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 60 V) 1 emitter High DC current gain (min. ... See More ⇒
NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications High collector current High current gain Complementary types BCV 28, BCV 48 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BCV 29 EF Q62702-C1853 B C E C SOT-89 BCV 49 EG Q62702-C1832 Maximum Ratings Parameter Symbol Values Unit BCV 29 BCV 49 Collector-emitter vol... See More ⇒
BCV29, BCV49 NPN Silicon Darlington Transistors 1 For general AF applications 2 High collector current 3 2 High current gain Complementary types BCV28, BCV48 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E SOT89 BCV49 EG 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Va... See More ⇒
Detailed specifications: BCR583, BCV26, BCV27, BCV28, BCV29, BCV46, BCV47, BCV48, S9013, BCV61, 2SB562-B, BCV61A, 2SB1721-Z, BCV61B, 2SB1644JFRA, BCV61C, 2SB1669
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