BCY70 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCY70
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
BCY70 Transistor Equivalent Substitute - Cross-Reference Search
BCY70 Datasheet (PDF)
bcy70 bcy71 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D361BCY70; BCY71PNP general purpose transistors1997 Jul 11Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistors BCY70; BCY71FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 e
bcy70 bcy71 bcy72.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BCY70 , 71, 72 TO-18 Metal Can PackageGeneral Purpose Industrial Applications.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BCY70 BCY71 BCY72 UNITCollector Emitter Voltage VCEO 40 45 25 VCollector Base Voltage VCB
bcy70dcsm.pdf
BCY70DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 40V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.05
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
