BD107 Datasheet and Replacement
Type Designator: BD107
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 64 V
Maximum Collector-Emitter Voltage |Vce|: 64 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
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BD107 Datasheet (PDF)
bd107.pdf

isc Silicon NPN Power Transistor BD107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 65V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver and output stages and highPower switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 65 VCBOV Colle
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NB021EZ | MCH3245 | 2SA1879 | HS5813 | MJE104 | MRF5812 | DTC703
Keywords - BD107 transistor datasheet
BD107 cross reference
BD107 equivalent finder
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History: NB021EZ | MCH3245 | 2SA1879 | HS5813 | MJE104 | MRF5812 | DTC703



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