All Transistors. BD107 Datasheet

 

BD107 Datasheet and Replacement


   Type Designator: BD107
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 64 V
   Maximum Collector-Emitter Voltage |Vce|: 64 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3
 

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BD107 Datasheet (PDF)

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BD107

isc Silicon NPN Power Transistor BD107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 65V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver and output stages and highPower switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 65 VCBOV Colle

Datasheet: BCZ10 , BCZ11 , BCZ12 , BCZ13 , BCZ14 , BD106 , BD106A , BD106B , A1013 , BD107A , BD107B , BD107C , BD109 , BD109-10 , BD109-16 , BD109-6 , BD109A .

History: 2SB1119T | 2SC1622D8 | 2SC1081 | 2SC2272 | NR431DS | KTA1695 | 2SC2636

Keywords - BD107 transistor datasheet

 BD107 cross reference
 BD107 equivalent finder
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