All Transistors. BD107B Datasheet

 

BD107B Datasheet and Replacement


   Type Designator: BD107B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 64 V
   Maximum Collector-Emitter Voltage |Vce|: 64 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO3
 

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BD107B Datasheet (PDF)

 9.1. Size:206K  inchange semiconductor
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BD107B

isc Silicon NPN Power Transistor BD107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 65V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver and output stages and highPower switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 65 VCBOV Colle

Datasheet: BCZ12 , BCZ13 , BCZ14 , BD106 , BD106A , BD106B , BD107 , BD107A , C3198 , BD107C , BD109 , BD109-10 , BD109-16 , BD109-6 , BD109A , BD109B , BD109C .

History: 2N5845 | BD506 | HD882S

Keywords - BD107B transistor datasheet

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