BD107C Specs and Replacement
Type Designator: BD107C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 64 V
Maximum Collector-Emitter Voltage |Vce|: 64 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO3
BD107C Substitution
- BJT ⓘ Cross-Reference Search
BD107C datasheet
isc Silicon NPN Power Transistor BD107 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 65V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver and output stages and high Power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 65 V CBO V Colle... See More ⇒
Detailed specifications: BCZ13, BCZ14, BD106, BD106A, BD106B, BD107, BD107A, BD107B, TIP42, BD109, BD109-10, BD109-16, BD109-6, BD109A, BD109B, BD109C, BD109D
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