BD109-10 Specs and Replacement
Type Designator: BD109-10
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 18 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Package: TO3
BD109-10 Substitution
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BD109-10 datasheet
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Detailed specifications: BD106, BD106A, BD106B, BD107, BD107A, BD107B, BD107C, BD109, 2SC945, BD109-16, BD109-6, BD109A, BD109B, BD109C, BD109D, BD111, BD111A
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