All Transistors. BD142-6 Datasheet

 

BD142-6 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD142-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3

 BD142-6 Transistor Equivalent Substitute - Cross-Reference Search

   

BD142-6 Datasheet (PDF)

 9.1. Size:75K  comset
bd142.pdf

BD142-6
BD142-6

BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONSLF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVCEO Collector-Emitter Voltage 45

 9.2. Size:204K  inchange semiconductor
bd142.pdf

BD142-6
BD142-6

isc Silicon NPN Power Transistor BD142DESCRIPTIONLow Collector Saturation VoltageHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF large signal power amplification.Intended for a wide variety of intermediate power applications.Suited for use in audio and inverter circuits at 12V.ABSOLUTE MAXIMUM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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