BD145 Specs and Replacement
Type Designator: BD145
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO3
BD145 Substitution
- BJT ⓘ Cross-Reference Search
BD145 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD145 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V )= 0.6V(Max)@ I = 3A CE(sat C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for g... See More ⇒
Detailed specifications: BD140G, BD141, BD142, BD142-4, BD142-5, BD142-6, BD142-7, BD144, A1941, BD148, BD148-10, BD148-16, BD148-6, BD148B, BD148C, BD149, BD149-10
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