BD169 Specs and Replacement
Type Designator: BD169
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
BD169 Substitution
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BD169 datasheet
Order this document MOTOROLA by BD165/D SEMICONDUCTOR TECHNICAL DATA BD165 BD169 Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi POWER TRANSISTORS complementary circuits. NPN SILICON DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 45,... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package BD165, BD167, BD169 BD165, 167, 169 NPN PLASTIC POWER TRANSISTORS Complementary BD166, 168, 170 Audio Amplifier and Driver Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS 165 167 169 ... See More ⇒
Detailed specifications: BD160, BD161, BD162, BD163, BD165, BD166, BD167, BD168, 2SB817, BD170, BD171, BD172, BD173, BD175, BD175-10, BD175-16, BD175-6
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