BD189 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD189
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
BD189 Transistor Equivalent Substitute - Cross-Reference Search
BD189 Datasheet (PDF)
..1. Size:207K inchange semiconductor
bd189.pdf
bd189.pdf
isc Silicon NPN Power Transistor BD189DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.5AFE CCollector-Emitter Sustaining Voltage -: V = 60V(Min)CEO(SUS)Complement to type BD190Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 5~10 Watt audio amplifiers utilizingComplementary or quasi complementary
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
