All Transistors. BD214-80 Datasheet

 

BD214-80 Datasheet and Replacement


   Type Designator: BD214-80
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TOP3
 

 BD214-80 Substitution

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BD214-80 Datasheet (PDF)

 9.1. Size:177K  inchange semiconductor
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BD214-80

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD214DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARA

Datasheet: BD213-45 , BD213-60 , BD213-80 , BD213B , BD213C , BD214 , BD214-45 , BD214-60 , 2SA1837 , BD214B , BD214C , BD215 , BD216 , BD220 , BD221 , BD222 , BD223 .

History: BUL54A | 2SC5275 | 3DD13005MD-O-HF | BU2520AX | 2SC789O | KSA542 | 2SB368H

Keywords - BD214-80 transistor datasheet

 BD214-80 cross reference
 BD214-80 equivalent finder
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