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BD214B Specs and Replacement

Type Designator: BD214B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TOP3

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BD214B datasheet

 9.1. Size:177K  inchange semiconductor

 bd214.pdf pdf_icon

BD214B

INCHANGE Semiconductor isc Silicon PNP Power Transistor BD214 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARA... See More ⇒

Detailed specifications: BD213-60 , BD213-80 , BD213B , BD213C , BD214 , BD214-45 , BD214-60 , BD214-80 , 2SC1815 , BD214C , BD215 , BD216 , BD220 , BD221 , BD222 , BD223 , BD224 .

History: BD213-80 | BD197 | BD193-5

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