All Transistors. BD214B Datasheet

 

BD214B Datasheet and Replacement


   Type Designator: BD214B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TOP3
 

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BD214B Datasheet (PDF)

 9.1. Size:177K  inchange semiconductor
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BD214B

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD214DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARA

Datasheet: BD213-60 , BD213-80 , BD213B , BD213C , BD214 , BD214-45 , BD214-60 , BD214-80 , 2N2222A , BD214C , BD215 , BD216 , BD220 , BD221 , BD222 , BD223 , BD224 .

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