BD214C Datasheet and Replacement
Type Designator: BD214C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TOP3
BD214C Substitution
BD214C Datasheet (PDF)
bd214.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD214DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARA
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N6597 | 2SD1168 | KTC3911 | D33J25 | JE9113A | MMSS8050-H | 2SC3501
Keywords - BD214C transistor datasheet
BD214C cross reference
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History: 2N6597 | 2SD1168 | KTC3911 | D33J25 | JE9113A | MMSS8050-H | 2SC3501



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