BD226 Datasheet and Replacement
Type Designator: BD226
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
BD226 Substitution
BD226 Datasheet (PDF)
bd226 bd228 bd230.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD226/228/230 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= 0.15A Complement to Type BD227/229/231 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD226 45 VCBO Collector-Base Voltage BD228 60 V B
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BD226-10 | 2SD1267 | BDX53 | 2N2729 | 2SD1271 | UNR1112
Keywords - BD226 transistor datasheet
BD226 cross reference
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History: BD226-10 | 2SD1267 | BDX53 | 2N2729 | 2SD1271 | UNR1112



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