All Transistors. BD227-10 Datasheet

 

BD227-10 Datasheet and Replacement


   Type Designator: BD227-10
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO126
 

 BD227-10 Substitution

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BD227-10 Datasheet (PDF)

 9.1. Size:142K  inchange semiconductor
 bd227 bd229 bd231.pdf pdf_icon

BD227-10

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD227 -45 VCBO Collector-Base Voltage BD229 -60 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDX64L | 2N5401AI

Keywords - BD227-10 transistor datasheet

 BD227-10 cross reference
 BD227-10 equivalent finder
 BD227-10 lookup
 BD227-10 substitution
 BD227-10 replacement

 

 
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