BD227-10 Specs and Replacement
Type Designator: BD227-10
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Package: TO126
BD227-10 Substitution
- BJT ⓘ Cross-Reference Search
BD227-10 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD227 -45 VCBO Collector-Base Voltage BD229 -60 V ... See More ⇒
Detailed specifications: BD223 , BD224 , BD225 , BD226 , BD226-10 , BD226-16 , BD226-6 , BD227 , SS8050 , BD227-16 , BD227-6 , BD228 , BD228-10 , BD228-16 , BD228-6 , BD229 , BD229-10 .
History: BD213C
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