BD227-6 Datasheet and Replacement
Type Designator: BD227-6
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
BD227-6 Substitution
BD227-6 Datasheet (PDF)
bd227 bd229 bd231.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD227 -45 VCBO Collector-Base Voltage BD229 -60 V
Datasheet: BD225 , BD226 , BD226-10 , BD226-16 , BD226-6 , BD227 , BD227-10 , BD227-16 , C3198 , BD228 , BD228-10 , BD228-16 , BD228-6 , BD229 , BD229-10 , BD229-16 , BD229-6 .
History: KSC5030O | 2SA1226 | CS1312G | T10N60GP | T1275 | 2SC1923 | TA1763
Keywords - BD227-6 transistor datasheet
BD227-6 cross reference
BD227-6 equivalent finder
BD227-6 lookup
BD227-6 substitution
BD227-6 replacement
History: KSC5030O | 2SA1226 | CS1312G | T10N60GP | T1275 | 2SC1923 | TA1763



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