BD228-10 Datasheet. Specs and Replacement

Type Designator: BD228-10  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 63

Noise Figure, dB: -

Package: TO126

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BD228-10 datasheet

 9.1. Size:754K  no

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BD228-10

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 9.2. Size:142K  inchange semiconductor

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BD228-10

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD226/228/230 DESCRIPTION DC Current Gain- hFE= 40(Min)@ IC= 0.15A Complement to Type BD227/229/231 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD226 45 VCBO Collector-Base Voltage BD228 60 V B... See More ⇒

Detailed specifications: BD226-10, BD226-16, BD226-6, BD227, BD227-10, BD227-16, BD227-6, BD228, C3198, BD228-16, BD228-6, BD229, BD229-10, BD229-16, BD229-6, BD230, BD230-10

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