BD228-10 Datasheet and Replacement
Type Designator: BD228-10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: TO126
BD228-10 Substitution
BD228-10 Datasheet (PDF)
bd226 bd228 bd230.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD226/228/230 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= 0.15A Complement to Type BD227/229/231 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD226 45 VCBO Collector-Base Voltage BD228 60 V B
Datasheet: BD226-10 , BD226-16 , BD226-6 , BD227 , BD227-10 , BD227-16 , BD227-6 , BD228 , 13005 , BD228-16 , BD228-6 , BD229 , BD229-10 , BD229-16 , BD229-6 , BD230 , BD230-10 .
History: KRA223M | 2SA706-3 | 3DF1B
Keywords - BD228-10 transistor datasheet
BD228-10 cross reference
BD228-10 equivalent finder
BD228-10 lookup
BD228-10 substitution
BD228-10 replacement
History: KRA223M | 2SA706-3 | 3DF1B



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