BD229-16 Datasheet. Specs and Replacement
Type Designator: BD229-16 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO126
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BD229-16 Substitution
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BD229-16 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD227 -45 VCBO Collector-Base Voltage BD229 -60 V ... See More ⇒
Detailed specifications: BD227-16, BD227-6, BD228, BD228-10, BD228-16, BD228-6, BD229, BD229-10, 2SC2655, BD229-6, BD230, BD230-10, BD230-16, BD230-6, BD231, BD231-10, BD231-16
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BJT Parameters and How They Relate
History: PN2716 | 2SC5209 | PN2894 | NA31LG | NA22HY
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