All Transistors. BD229-6 Datasheet

 

BD229-6 Datasheet and Replacement


   Type Designator: BD229-6
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126
 

 BD229-6 Substitution

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BD229-6 Datasheet (PDF)

 9.1. Size:142K  inchange semiconductor
 bd227 bd229 bd231.pdf pdf_icon

BD229-6

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD227 -45 VCBO Collector-Base Voltage BD229 -60 V

Datasheet: BD227-6 , BD228 , BD228-10 , BD228-16 , BD228-6 , BD229 , BD229-10 , BD229-16 , 2SD669A , BD230 , BD230-10 , BD230-16 , BD230-6 , BD231 , BD231-10 , BD231-16 , BD231-6 .

History: L8550HRLT1G

Keywords - BD229-6 transistor datasheet

 BD229-6 cross reference
 BD229-6 equivalent finder
 BD229-6 lookup
 BD229-6 substitution
 BD229-6 replacement

 

 
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