BD230-10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD230-10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: TO126
BD230-10 Transistor Equivalent Substitute - Cross-Reference Search
BD230-10 Datasheet (PDF)
bd230.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD230NPN power transistor1999 Apr 21Product specificationSupersedes data of 1997 Mar 06Philips Semiconductors Product specificationNPN power transistor BD230FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mou
bd226 bd228 bd230.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD226/228/230 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= 0.15A Complement to Type BD227/229/231 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD226 45 VCBO Collector-Base Voltage BD228 60 V B
bd230.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD230 DESCRIPTION With TO-126 package Complement to type BD231 High current (Max:1.5A) Low voltage (Max: 80V) APPLICATIONS Drive stage in TV circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
