2N2855-2 PDF and Equivalents Search

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SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒

2N2857 MECHANICAL DATA Dimensions in mm (inches) NPN TRANSISTOR 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) FEATURES SILICON NPN TRANSISTOR 0.48 (0.019) APPLICATIONS 0.41 (0.016) dia. AMPLIFIER, OSCILLATOR AND CONVERTER APPLICATIONS UP TO 500MHz 2.54 (0.100) Nom. 4 3 1 2 TO-72 METAL PACKAGE ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VC... See More ⇒

2N2857DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 30V CEO 6.22 0.13 A = 1.27 0.13 I = 0.04A C (0.... See More ⇒