All Transistors. BD243C Datasheet

 

BD243C Datasheet, Equivalent, Cross Reference Search

Type Designator: BD243C

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 115 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

BD243C Transistor Equivalent Substitute - Cross-Reference Search

 

BD243C Datasheet (PDF)

..1. bd243b bd244b bd243c bd244c.pdf Size:140K _motorola

BD243C BD243C

Order this documentMOTOROLAby BD243B/DSEMICONDUCTOR TECHNICAL DATANPNBD243BComplementary Silicon PlasticBD243C*Power TransistorsPNP. . . designed for use in general purpose amplif

..2. bd243c bd244c.pdf Size:341K _st

BD243C BD243C

BD243CBD244CComplementary power transistors .Features Complementary NPN-PNP devicesApplications Power linear and switching321DescriptionTO-220The device is manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain performance Figure 1. Internal schematic diagramcoupled with very low saturation vo

..3. bd243 bd243a bd243b bd243c.pdf Size:38K _fairchild_semi

BD243C BD243C

BD243/A/B/CMedium Power Linear and Switching Applications Complement to BD244, BD244A, BD244B and BD244C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD243 45 V: BD243A 60 V: BD243B 80 V: BD243C 100 V VCEO Collector-

..4. bd243b bd243c bd244b bd244c.pdf Size:233K _onsemi

BD243C BD243C

BD243B, BD243C (NPN),BD244B, BD244C (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general purpose amplifier andswitching applications. www.onsemi.comFeatures6 AMPERE High Current Gain Bandwidth ProductPOWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*COMPLEMENTARY SILICON80-100 VOLTSMAXIMUM RATINGS65 W

..5. bd243 bd243a bd243b bd243c.pdf Size:212K _inchange_semiconductor

BD243C BD243C

isc Silicon NPN Power Transistor BD243/A/B/CDESCRIPTIONDC Current Gain -h =30(Min)@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BD243; 60V(Min)- BD243ACEO(SUS)80V(Min)- BD243B; 100V(Min)- BD243CComplement to Type BD244/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in gener

0.1. bd243cg.pdf Size:137K _onsemi

BD243C BD243C

BD243B, BD243C (NPN)BD244B, BD244C (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general purpose amplifier andswitching applications. http://onsemi.comFeatures6 AMPERE Collector - Emitter Saturation Voltage -POWER TRANSISTORSVCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 AdcCOMPLEMENTARY SILICON Collector Emitter Sustaining Voltage -

9.1. bd243 a b c bd244.pdf Size:71K _cdil

BD243C BD243C

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD243, BD243A, BD243B, BD243CBD244, BD244A, BD244B, BD244CBD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORSBD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORSGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER

9.2. bd243.pdf Size:86K _power-innovations

BD243C BD243C

BD243, BD243A, BD243B, BD243CNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD244 SeriesTO-220 PACKAGE(TOP VIEW) 65 W at 25C Case Temperature 6 A Continuous Collector CurrentB 1C 2 10 A Peak Collector CurrentE 3 Customer-Specified Selections AvailablePin 2 is in el

 9.3. bd243 a b c.pdf Size:202K _inchange_semiconductor

BD243C BD243C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION DC Current Gain -hFE =30(Min)@ IC= 0.3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C Complement to Type BD244/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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