BD249C Datasheet. Specs and Replacement
Type Designator: BD249C 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO218
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BD249C datasheet
BD249C NPN High-Power Transistor NPN high-power transistors are for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 25 AMP, 100 VOLT, 125 WATT Pb-Free Package is Available* NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol ... See More ⇒
bd249 bd249a bd249b bd249c.pdf ![]()
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD249/A/B/C DESCRIPTION Collector Current -I = 25A C Complement to Type BD250/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD250 Series (TOP VIEW) 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma... See More ⇒
Detailed specifications: BD246B, BD246C, BD246D, BD246E, BD246F, BD249, BD249A, BD249B, D880, BD249D, BD249E, BD249F, BD250, BD250A, BD250B, BD250C, BD250D
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