All Transistors. BD249C Datasheet

 

BD249C Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD249C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 115 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO218

 BD249C Transistor Equivalent Substitute - Cross-Reference Search

   

BD249C Datasheet (PDF)

 ..1. Size:189K  onsemi
bd249c.pdf

BD249C
BD249C

BD249CNPN High-Power TransistorNPN high-power transistors are for general-purpose poweramplifier and switching applications.Features ESD Ratings: Machine Model, C; > 400 Vhttp://onsemi.comHuman Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.12525 AMP, 100 VOLT, 125 WATT Pb-Free Package is Available*NPN SILICONPOWER TRANSISTORMAXIMUM RATINGSRating Symbol

 ..2. Size:194K  inchange semiconductor
bd249 bd249a bd249b bd249c.pdf

BD249C
BD249C

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD249/A/B/CDESCRIPTIONCollector Current -I = 25ACComplement to Type BD250/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 9.1. Size:86K  bourns
bd249-a-b-c.pdf

BD249C
BD249C

BD249, BD249A, BD249B, BD249CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGEBD250 Series(TOP VIEW) 125 W at 25C Case TemperatureB1 25 A Continuous Collector CurrentC 2 40 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma

 9.2. Size:131K  mospec
bd249 bd250.pdf

BD249C
BD249C

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 9.3. Size:121K  inchange semiconductor
bd249 a b c.pdf

BD249C
BD249C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C DESCRIPTION With TO-3PN package Complement to type BD250/A/B/C 125 W at 25C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum rat

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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