BD249E Datasheet. Specs and Replacement
Type Designator: BD249E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO218
BD249E Substitution
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BD249E datasheet
BD249C NPN High-Power Transistor NPN high-power transistors are for general-purpose power amplifier and switching applications. Features ESD Ratings Machine Model, C; > 400 V http //onsemi.com Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V-0 @ 0.125 25 AMP, 100 VOLT, 125 WATT Pb-Free Package is Available* NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol ... See More ⇒
BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE BD250 Series (TOP VIEW) 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C DESCRIPTION With TO-3PN package Complement to type BD250/A/B/C 125 W at 25 C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum rat... See More ⇒
Detailed specifications: BD246D, BD246E, BD246F, BD249, BD249A, BD249B, BD249C, BD249D, D209L, BD249F, BD250, BD250A, BD250B, BD250C, BD250D, BD250E, BD250F
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