BD2530 Datasheet. Specs and Replacement
Type Designator: BD2530
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO3
BD2530 Substitution
- BJT ⓘ Cross-Reference Search
BD2530 datasheet
BD253A Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 4A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
Detailed specifications: BD250A, BD250B, BD250C, BD250D, BD250E, BD250F, BD251, BD253, BC556, BD253A, BD253B, BD253C, BD254, BD2540, BD255, BD2550, BD257
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