BD253B Specs and Replacement
Type Designator: BD253B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BD253B Substitution
BD253B detailed specifications
bd253a.pdf
BD253A Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 4A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
Detailed specifications: BD250C , BD250D , BD250E , BD250F , BD251 , BD253 , BD2530 , BD253A , 2SD669 , BD253C , BD254 , BD2540 , BD255 , BD2550 , BD257 , BD257-100 , BD257-45 .
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