All Transistors. 2N2857 Datasheet

 

2N2857 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N2857
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1000 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO72

 2N2857 Transistor Equivalent Substitute - Cross-Reference Search

   

2N2857 Datasheet (PDF)

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2n2857.pdf

2N2857

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2n2857 2n3839.pdf

2N2857

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

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2n2857.pdf

2N2857
2N2857

2N2857MECHANICAL DATADimensions in mm (inches)NPN TRANSISTOR4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES SILICON NPN TRANSISTOR0.48 (0.019)APPLICATIONS:0.41 (0.016)dia. AMPLIFIER, OSCILLATOR ANDCONVERTER APPLICATIONS UP TO500MHz2.54 (0.100)Nom.43 12TO-72 METAL PACKAGEABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)VC

 0.1. Size:197K  semelab
2n2857c1b.pdf

2N2857
2N2857

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 0.2. Size:196K  semelab
2n2857c1.pdf

2N2857
2N2857

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 0.3. Size:197K  semelab
2n2857c1a.pdf

2N2857
2N2857

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 0.4. Size:10K  semelab
2n2857dcsm.pdf

2N2857

2N2857DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 30V CEO6.22 0.13 A = 1.27 0.13I = 0.04A C(0.

Datasheet: 2N2855 , 2N2855-1 , 2N2855-2 , 2N2855-3 , 2N2856 , 2N2856-1 , 2N2856-2 , 2N2856-3 , 2SC5200 , 2N2857CSM , 2N2857QF , 2N2857UB , 2N2858 , 2N2859 , 2N285A , 2N285B , 2N2860 .

 

 
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