2N2857 Specs and Replacement
Type Designator: 2N2857
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO72
2N2857 Substitution
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2N2857 datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2N2857 MECHANICAL DATA Dimensions in mm (inches) NPN TRANSISTOR 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) FEATURES SILICON NPN TRANSISTOR 0.48 (0.019) APPLICATIONS 0.41 (0.016) dia. AMPLIFIER, OSCILLATOR AND CONVERTER APPLICATIONS UP TO 500MHz 2.54 (0.100) Nom. 4 3 1 2 TO-72 METAL PACKAGE ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VC... See More ⇒
SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒
Detailed specifications: 2N2855, 2N2855-1, 2N2855-2, 2N2855-3, 2N2856, 2N2856-1, 2N2856-2, 2N2856-3, BD333, 2N2857CSM, 2N2857QF, 2N2857UB, 2N2858, 2N2859, 2N285A, 2N285B, 2N2860
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