BD262C Datasheet. Specs and Replacement

Type Designator: BD262C

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

 BD262C Substitution

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BD262C datasheet

 9.1. Size:236K  inchange semiconductor

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BD262C

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD262 DESCRIPTION Collector Emitter Sustaining Voltage V = CEO(SUS) -60V(Min.) DC Current Gain h = 750(Min) @ I = -2A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed ... See More ⇒

Detailed specifications: BD258-45, BD258-60, BD258-80, BD260, BD261, BD262, BD262A, BD262B, 2SC5200, BD262L, BD263, BD263A, BD263B, BD263C, BD263L, BD264, BD264A

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