BD277 Datasheet. Specs and Replacement
Type Designator: BD277
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO66
BD277 Substitution
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BD277 datasheet
isc Silicon PNP Power Transistor BD277 DESCRIPTION Wide Area of Safe Operation Low Saturation Voltage- High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in series regulators and shunt regulators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -45... See More ⇒
Detailed specifications: BD269, BD269A, BD271, BD272, BD273, BD274, BD275, BD276, S9014, BD278, BD278A, BD279, BD280, BD281, BD282, BD283, BD284
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