BD283 Specs and Replacement
Type Designator: BD283
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO126
BD283 Substitution
- BJT ⓘ Cross-Reference Search
BD283 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD2837; PMBD2838 High-speed double diodes 1996 Sep 18 Product specification Supersedes data of April 1996 Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 FEATURES MARKING PINNING Small plastic SMD package MARKING PIN DESCRIPTION TYPE NUMBER CODE High switching speed max.... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD2835; PMBD2836 High-speed double diodes 1996 Sep 18 Product specification Supersedes data of April 1996 Philips Semiconductors Product specification High-speed double diodes PMBD2835; PMBD2836 FEATURES MARKING PINNING Small plastic SMD package MARKING PIN DESCRIPTION TYPE NUMBER CODE High switching speed max.... See More ⇒
Detailed specifications: BD276, BD277, BD278, BD278A, BD279, BD280, BD281, BD282, BD335, BD284, BD285, BD286, BD287, BD288, BD291, BD292, BD293
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