BD283 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD283
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package: TO126
BD283 Transistor Equivalent Substitute - Cross-Reference Search
BD283 Datasheet (PDF)
pmbd2837 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD2837; PMBD2838High-speed double diodes1996 Sep 18Product specificationSupersedes data of April 1996Philips Semiconductors Product specificationHigh-speed double diodes PMBD2837; PMBD2838FEATURES MARKING PINNING Small plastic SMD packageMARKING PIN DESCRIPTIONTYPE NUMBERCODE High switching speed: max.
pmbd2835 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBD2835; PMBD2836High-speed double diodes1996 Sep 18Product specificationSupersedes data of April 1996Philips Semiconductors Product specificationHigh-speed double diodes PMBD2835; PMBD2836FEATURES MARKING PINNING Small plastic SMD packageMARKING PIN DESCRIPTIONTYPE NUMBERCODE High switching speed: max.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
