BD318 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD318
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD318 Transistor Equivalent Substitute - Cross-Reference Search
BD318 Datasheet (PDF)
..2. Size:207K inchange semiconductor
bd318.pdf
bd318.pdf
isc Silicon PNP Power Transistor BD318DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h = 25(Min.)@I = -5AFE CCollector-Emitter Saturation Voltage-: V )= -1.0 V(Max)@ I = -8ACE(sat CComplement to Type BD317Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high quality amplifiers operating up to 1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
