BD335 Specs and Replacement
The BD335 is an NPN bipolar junction transistor designed for medium-power switching and amplification. Housed in a TO126 package, it typically supports a collector-emitter voltage of 100V and a continuous collector current up to 6A, making it suitable for driver stages, regulated power supplies, audio output modules. Its DC current gain ranges roughly from 750 to 5000, ensuring stable operation across load conditions. With good thermal conductivity and moderate switching speed, the BD335 offers reliable performance in compact designs where efficiency, durability, straightforward biasing are essential.
Type Designator: BD335
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO126
BD335 Substitution
- BJT ⓘ Cross-Reference Search
BD335 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD335 DESCRIPTION High DC Current Gain Complement to type BD336 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: BD323C , BD328 , BD329 , BD330 , BD331 , BD332 , BD333 , BD334 , BD139 , BD336 , BD337 , BD338 , BD342 , BD343 , BD344 , BD345 , BD346 .
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