BD336 Specs and Replacement
Type Designator: BD336
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO126
BD336 Substitution
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BD336 datasheet
BD336 SILICON PNP POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS 3 DESCRIPTION 2 1 The BD336 is a silicon epitaxial-base PNP transistor in Darlingon configuration mounted in SOT-82 SOT-82 plastic package. It is inteded for use ... See More ⇒
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD336 DESCRIPTION High DC Current Gain Complement to type BD335 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: BD328 , BD329 , BD330 , BD331 , BD332 , BD333 , BD334 , BD335 , 2N3904 , BD337 , BD338 , BD342 , BD343 , BD344 , BD345 , BD346 , BD347 .
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