BD336 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD336
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO126
BD336 Transistor Equivalent Substitute - Cross-Reference Search
BD336 Datasheet (PDF)
bd336.pdf
BD336SILICON PNP POWER DARLINGTON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS 3DESCRIPTION 21The BD336 is a silicon epitaxial-base PNPtransistor in Darlingon configuration mounted inSOT-82SOT-82 plastic package.It is inteded for use
bd336.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD336DESCRIPTIONHigh DC Current GainComplement to type BD335Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPNP epitaxial base transistors in monolithic Darlingtoncircuit for audio output stages and general amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
