BD337 PDF and Equivalents Search

 

BD337 Specs and Replacement

Type Designator: BD337

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

 BD337 Substitution

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BD337 datasheet

 ..1. Size:427K  philips

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BD337

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 ..2. Size:209K  inchange semiconductor

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BD337

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD337 DESCRIPTION High DC Current Gain Complement to type BD338 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: BD329 , BD330 , BD331 , BD332 , BD333 , BD334 , BD335 , BD336 , 2N2222 , BD338 , BD342 , BD343 , BD344 , BD345 , BD346 , BD347 , BD348 .

History: 2SD2561Y

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