BD343 Datasheet and Replacement
Type Designator: BD343
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BD343 Substitution
BD343 Datasheet (PDF)
bd343.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor BD343DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-: h =15-100(Min)@I = -8AFE CLow Saturation Voltage-: V )= -1.0V(Max)@ I = -8.0ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applications
Datasheet: BD332 , BD333 , BD334 , BD335 , BD336 , BD337 , BD338 , BD342 , 2N2222 , BD344 , BD345 , BD346 , BD347 , BD348 , BD349 , BD350 , BD350A .
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