BD343 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD343
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BD343 Transistor Equivalent Substitute - Cross-Reference Search
BD343 Datasheet (PDF)
bd343.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor BD343DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-: h =15-100(Min)@I = -8AFE CLow Saturation Voltage-: V )= -1.0V(Max)@ I = -8.0ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applications
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .