BD343 Specs and Replacement
Type Designator: BD343
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.7 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BD343 Substitution
- BJT ⓘ Cross-Reference Search
BD343 datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD343 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- h =15-100(Min)@I = -8A FE C Low Saturation Voltage- V )= -1.0V(Max)@ I = -8.0A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applications... See More ⇒
Detailed specifications: BD332 , BD333 , BD334 , BD335 , BD336 , BD337 , BD338 , BD342 , C1815 , BD344 , BD345 , BD346 , BD347 , BD348 , BD349 , BD350 , BD350A .
History: 2SD2562Y
Keywords - BD343 pdf specs
BD343 cross reference
BD343 equivalent finder
BD343 pdf lookup
BD343 substitution
BD343 replacement
