All Transistors. BD347 Datasheet

 

BD347 Datasheet and Replacement


   Type Designator: BD347
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

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BD347 Datasheet (PDF)

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BD347

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 3ACE(sat CGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for RF power and general-purpose audio

Datasheet: BD336 , BD337 , BD338 , BD342 , BD343 , BD344 , BD345 , BD346 , A1015 , BD348 , BD349 , BD350 , BD350A , BD350B , BD351 , BD351A , BD351B .

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