BD347 Specs and Replacement
Type Designator: BD347
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
BD347 Substitution
- BJT ⓘ Cross-Reference Search
BD347 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor BD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 3A CE(sat C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for RF power and general-purpose audio... See More ⇒
Detailed specifications: BD336 , BD337 , BD338 , BD342 , BD343 , BD344 , BD345 , BD346 , TIP41 , BD348 , BD349 , BD350 , BD350A , BD350B , BD351 , BD351A , BD351B .
Keywords - BD347 pdf specs
BD347 cross reference
BD347 equivalent finder
BD347 pdf lookup
BD347 substitution
BD347 replacement
