All Transistors. BD354A Datasheet

 

BD354A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD354A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO66

 BD354A Transistor Equivalent Substitute - Cross-Reference Search

   

BD354A Datasheet (PDF)

 9.2. Size:199K  inchange semiconductor
bd354.pdf

BD354A
BD354A

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD354DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1.0V(Max)@ I = 2ACE(sat CExcellent Safe Operating AreaComplement to Type BD355Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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